FQP3P50 -500V -2.7A P-Channel Power MOSFET

Description

Marked "FQP3P50" on the package with ON Semiconductor's (Fairchild) logo, this is ON Semiconductor's FQP3P50, a -500V P-channel enhancement mode QFET® power MOSFET. Produced using proprietary planar stripe and DMOS technology, it is engineered to deliver low on-state resistance, fast switching performance, and high avalanche energy withstand capability.

Housed in a standard TO-220 package with a metal mounting tab, it provides excellent thermal dissipation for high-voltage switching circuits requiring P-channel high-side switching or control.

Key Specifications

• Type: P-Channel Enhancement Mode Power MOSFET (QFET®)

• Manufacturer: ON Semiconductor (onsemi) / Fairchild

• Package Marking: FQP 3P50 / 1J43AR

• Package: TO-220 (3-pin through-hole with metal tab)

• Drain-Source Voltage ($V_{DSS}$): -500V

• Drain Current ($I_D$): -2.7A (Continuous, $T_C = 25^\circ\text{C}$)

• Pulsed Drain Current ($I_{DP}$): -10.8A

• Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max

• Gate Threshold Voltage ($V_{GS(th)}$): -3.0V to -5.0V

• $R_{DS(ON)}$, max: $4.9\,\Omega$ at $V_{GS} = -10\text{V}$

• Power Dissipation ($P_D$): 85W

• Total Gate Charge ($Q_g$): 18nC (typ.)

• Max Junction Temperature: 150°C

Common Applications

• High-side switching in high-voltage DC-DC converters

• Switch-Mode Power Supplies (SMPS)

• Active clamp and snubber circuits

• Electronic ballasts and power control circuits

Package Includes

• 1 x ON Semiconductor FQP3P50 -500V -2.7A P-Channel Power MOSFET (TO-220)