MOSFET transistor K100E08N1
Type TK100E08N1 Type of MOSFET Type of Control N -Channel Maximum Power Dissipation 255 W Maximum Drain-Source Voltage 80 V Maximum Gate-Source Voltage 20 V Maximum Gate-Threshold Voltage 4 V Maximum Drain Current 100 A Maximum Junction Temperature 150 °C Total Gate Charge 130 nC Rise Time 26 nS Package 1 x Mosfet transistor K100E08N1.
Description
The TK100E08N1 is a MOSFET transistor in Pakistan with N-channel control and a maximum power dissipation of 255 W. Its maximum drain-source voltage is 80 V, maximum gate-source voltage is 20 V, and maximum gate-threshold voltage is 4 V. This transistor can handle a maximum drain current of 100 A and has a maximum junction temperature of 150 °C. It also has a total gate charge of 130 nC and a rise time of 26 nS.
Package Include:
1 x Mosfet transistor K100E08N1
