N190R65 650V 20A N-Channel Super Junction Power MOSFET

Description

Marked "N190R65" on the package with AUK Semiconductor's logo, this is AUK's N190R65 (such as SCN190R65F / STN190R65F), a 650V N-channel Super Junction Power MOSFET. Built using advanced super junction technology, it offers an extremely low state-on resistance ($R_{DS(ON)}$), low gate charge ($Q_g$), and fast switching performance designed to maximize efficiency in high-voltage power conversion circuits.

Housed in an isolated TO-220F package, it provides internal electrical isolation for safe, direct mounting onto heat sinks without needing extra insulating washers.

Key Specifications

• Type: N-Channel Enhancement Mode Super Junction Power MOSFET

• Manufacturer: AUK Semiconductor

• Package Marking: N190R65 / H41215F

• Package: TO-220F (Isolated 3-pin through-hole)

• Drain-Source Voltage ($V_{DSS}$): 650V

• Drain Current ($I_D$): 20A (Continuous, $T_C = 25^\circ\text{C}$)

• Pulsed Drain Current ($I_{DP}$): 60A

• Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max

• Gate Threshold Voltage ($V_{GS(th)}$): 2.5V to 4.5V

• $R_{DS(ON)}$, max: $0.190\,\Omega$ ($190\,\text{m}\Omega$) at $V_{GS} = 10\text{V}$

• Power Dissipation ($P_D$): 34W

• Max Junction Temperature: 150°C

Common Applications

• Switch-Mode Power Supplies (SMPS)

• Power Factor Correction (PFC) boost stages

• Server, telecom, and industrial power supplies

• High-efficiency DC-DC converters and battery charging systems

Package Includes

• 1 x AUK N190R65 650V 20A N-Channel Super Junction Power MOSFET (TO-220F)