PD020065E1H-G 20A 650V SiC Schottky Power Diode

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Description A 20A, 650V Silicon Carbide (SiC) Schottky power diode housed in a rugged TO-247 (3-pin) package.

Description

Description

A 20A, 650V Silicon Carbide (SiC) Schottky power diode housed in a rugged TO-247 (3-pin) package. SiC Schottky diodes offer major advantages over standard silicon diodes — including zero reverse recovery current, temperature-independent switching behavior, and high-frequency capability — making them ideal for high-efficiency power conversion designs.

Key Features:

  • Forward Current (I_F): 20A
  • Reverse Voltage (V_RRM): 650V
  • Zero reverse recovery current — no switching losses from reverse recovery
  • Positive temperature coefficient — easy to parallel for higher current designs
  • High-temperature operation — typically rated up to 175°C junction temperature
  • Unipolar device — purely capacitive turn-off behavior, no forward recovery
  • Package: Through-hole TO-247 (3-pin)

Ideal For:

  • Power Factor Correction (PFC) circuits
  • Solar/PV inverters
  • Uninterruptible Power Supplies (UPS)
  • Motor drives
  • EV and battery chargers
  • High-frequency switch-mode power supplies (SMPS)

Package Includes:

  • 1 x PD020065E1H_G SiC Schottky Diode (TO-247)