TK31A60W 600V 30.8A N-Channel Power MOSFET

Description
Marked "K31A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK31A60W, an N-channel MOSFET rated 600V with an on-resistance of 0.088Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad. It's the highest-current member of the same 600V DTMOSIV family that includes the TK12A60W and TK16A60W.

Key features include a low typical drain-source on-resistance of RDS(ON) = 0.073Ω, achieved through a super junction structure (DTMOS), easy gate switching control, and enhancement-mode operation with a gate threshold voltage of 2.7 to 3.7V (VDS = 10V, ID = 1.5mA). It's intended primarily for switching voltage regulator applications.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV)
• Manufacturer: Toshiba Semiconductor
• Package Marking: K31A60W
• Package: TO-220SIS, isolated, 3-pin (Gate, Drain, Source)
• Drain-Source Voltage (VDSS): 600V
• Continuous Drain Current (ID): 30.8A
• Gate-Source Voltage (VGS): 30V max
• RDS(ON), typical: 0.073Ω
• Gate Threshold Voltage (Vth): 2.7 to 3.7V
• Power Dissipation: 45W
• Total Gate Charge (Qg): 86nC
• Max Junction Temperature: 150°C
• Output Capacitance (Coss): 70pF

Common Applications

• Switching voltage regulators
• Offline SMPS and flyback converters
• General-purpose 600V-class power switching designs requiring higher current handling than the TK12A60W/TK16A60W siblings

Package Includes

• 1 x Toshiba TK31A60W N-Channel Power MOSFET (TO-220SIS)