TK40A10N1 N-Channel Power MOSFET

Description

Marked "K40A10N1" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK40A10N1, an N-channel MOSFET rated 100V with an on-resistance of 0.0082Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's U-MOSVIII-H process. The isolated TO-220SIS ("Same as Isolated Standard") outline simplifies mounting to a heatsink without a separate insulating pad, similar in shape to a standard TO-220 but with an isolated tab.

Key features include a low typical drain-source on-resistance of RDS(ON) = 6.8mΩ at VGS = 10V, low leakage current with IDSS of 10µA max at VDS = 100V, and enhancement-mode operation with a gate threshold voltage of 2.0 to 4.0V. It's intended primarily for switching voltage regulator applications — the low RDS(ON) and moderate voltage rating make it well suited for synchronous rectification and high-current, low-voltage switching stages.

Key Specifications

• Type: N-Channel Enhancement Mode Power MOSFET
• Manufacturer: Toshiba Semiconductor
• Package Marking: K40A10N1
• Package: TO-220SIS (isolated), 3-pin (Gate, Drain, Source)
• Drain-Source Voltage (VDSS): 100V
• Drain Current (ID): 40A 
• RDS(ON), typical: 6.8mΩ (VGS = 10V) 
• Gate Threshold Voltage (Vth): 2.0 to 4.0V (VDS = 10V, ID = 0.5mA) 
• Leakage Current (IDSS): 10µA max (VDS = 100V) 

• Process: U-MOSVIII-H

Common Applications

• Switching voltage regulators
• DC-DC converter synchronous rectification
• Low-voltage, high-current power switching
• Motor drive and battery-powered switching circuits

Package Includes

• 1 x Toshiba TK40A10N1 N-Channel Power MOSFET (TO-220SIS)