TRS8A65F 650V 8A Schottky Barrier Diode
DescriptionMarked "TRS8A65F" on the package with Toshiba's logo, this is Toshiba's TRS8A65F, a Silicon Carbide (SiC) Schottky Barrier Diode from Toshiba Semiconductor.
Description
Description
Marked "TRS8A65F" on the package with Toshiba's logo, this is Toshiba's TRS8A65F, a Silicon Carbide (SiC) Schottky Barrier Diode from Toshiba Semiconductor. It's rated 650V/8A in a 2-pin (2+Tab) TO-220F-L package. The package layout is cathode on pin 1, anode on pin 2, in the TO-220F-2L outline.
As with Toshiba's broader SiC Schottky diode range, it's suited for high-efficiency, high-speed switching applications, offering low-loss and high-efficiency power conversion, low leakage current, high-speed switching, and recovery characteristics that are independent of temperature. Reverse recovery time (trr) is effectively 0ns, a hallmark of SiC Schottky technology versus silicon fast-recovery diodes.
Key Specifications
- Type: Silicon Carbide (SiC) Schottky Barrier Diode
- Manufacturer: Toshiba Semiconductor and Storage
- Package Marking: TRS8A65F
- Package: TO-220F-2L, isolated, 2-pin (2+tab), through-hole
- Reverse Voltage: 650V
- Forward Current: 8A
- Reverse Recovery Time (trr): 0ns
- Pin Configuration: Pin 1 = Cathode, Pin 2 = Anode
Common Applications
- High-efficiency, high-speed switching applications
- Switch-mode power supplies (SMPS)
- PFC boost diode stages
- DC-DC converters requiring low switching loss
Package Includes
- 1 x Toshiba TRS8A65F SiC Schottky Barrier Diode (TO-220F-2L)
