FFSH5065A 650V 50A TO 247 2L EliteSiC Silicon Carbide Schottky Diode

Description

Marked "FFSH 5065A" on the package with the ON Semiconductor logo, this is a Silicon Carbide (SiC) Schottky Diode from onsemi's EliteSiC line, rated 50A/650V in a D1, TO-247-2L package. Silicon Carbide Schottky diodes use a fundamentally different technology than standard silicon diodes, offering superior switching performance and higher reliability. Visually, the two-pin (D1) TO-247 outline with a single black-body imprint and only two active leads (the third pin, if present, is typically unconnected/mechanical) is characteristic of this "-2L" variant.

These diodes feature no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, positioning SiC as the next generation of power semiconductor technology. System-level benefits include higher efficiency, faster operating frequency, increased power density, reduced EMI, and reduced overall system size and cost compared to using an equivalent silicon fast-recovery or ultrafast diode.

Key Specifications

• Type: Silicon Carbide (SiC) Schottky Diode (EliteSiC series)
• Manufacturer: onsemi (ON Semiconductor)
• Package Marking: FFSH5065A
• Package: TO-247-2L (2-lead), through-hole
• Repetitive Reverse Voltage (VRRM): 650V
• Forward Current: 50A (rated; some distributor listings cite up to 60A depending on test conditions)
• Max Junction Temperature: 175°C
• Avalanche Rated: 240 mJ
• Reverse Recovery: None (no reverse recovery / no forward recovery) 
• Temperature Coefficient: Positive, enabling easy paralleling of multiple devices 
• Compliance: Pb-free, Halogen-free/BFR-free, RoHS compliant 

Common Applications

• PFC (Power Factor Correction) boost diodes
• Solar/PV inverters
• Server and telecom power supplies
• Motor drives and industrial power converters
• EV charging and other high-efficiency, high-frequency switching systems

Package Includes

• 1 x onsemi FFSH5065A SiC Schottky Diode (TO-247-2L)