FQP33N10 TO-220 N-Channel power Mosfet

FQP33N10 — 100V 33A N-Channel Power MOSFET (TO-220)

The FQP33N10 is an N-channel enhancement-mode power MOSFET built using onsemi/Fairchild's proprietary planar stripe DMOS technology. It's designed for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications, making it a versatile choice for a wide range of power electronics and DIY projects.

This MOSFET delivers 33A of drain current at 100V, with a low on-resistance RDS(on) of 0.052Ω at VGS = 10V. It also features low gate charge and low reverse transfer capacitance for fast, efficient switching, is 100% avalanche tested, and offers improved dv/dt capability along with a 175°C maximum junction temperature rating. These characteristics make it well-suited for both linear and switching applications where efficiency and reliability matter.

Housed in the industry-standard TO-220 package with a G-D-S pinout, it's easy to mount on a heatsink and integrate into existing circuit designs, breadboard prototypes, or PCB layouts.

Key Specifications

• Type: N-Channel Enhancement-Mode Power MOSFET
• Package: TO-220 (3-lead, G-D-S)
• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 33A
• RDS(on): 0.052Ω max @ VGS = 10V 
• Gate Charge: typ. 38nC
• Reverse Transfer Capacitance (Crss): typ. 62pF 
• Max Junction Temperature: 175°C 
• 100% avalanche tested

Common Applications

• Switched-mode power supplies (SMPS)
• Audio amplifiers
• DC motor control and drivers
• Battery management, load switching, and general power control circuits
• DIY electronics, Arduino/microcontroller-driven power switching projects

Package Includes

• 1 x FQP33N10 N-Channel Power MOSFET (TO-220)