NCE65TF099F N Channel Super Junction Power MOSFET

Description

Marked "NCE65TF099F" on the package with the NCE logo, this is Wuxi NCE Power Semiconductor's NCE65TF099F, part of their Super Junction Power MOSFET III family. The series uses advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge, and this super junction MOSFET fits the industry's AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. It's also suited for applications like fast chargers, new energy vehicle charging piles, and on-board OBC (on-board charger) systems. The isolated TO-220F package with the standard 3-pin layout allows direct heatsink mounting without a separate insulating pad.

Key Specifications

• Type: N-Channel Super Junction Power MOSFET (Super Junction III)

• Manufacturer: Wuxi NCE Power Semiconductor

• Package Marking: NCE65TF099F

• Package: TO-220F, isolated, 3-pin, through-hole

• Drain-Source Voltage (VDS): 650V 

• Drain Current (ID): 38A 

• RDS(ON), typical: 89mΩ @ 10V, 19A 

• RDS(ON), max: 0.109Ω

• Gate Threshold Voltage: 3.5V @ 250µA

• Power Dissipation: 36W

• Total Gate Charge (Qg): 55nC @ 10V

• Junction Temperature Range: -55°C to +150°C

• Compliance: RoHS

Common Applications

• PFC (Power Factor Correction) stages

• AC/DC power conversion

• Industrial power applications

• Fast chargers

• New energy vehicle (EV) charging piles and on-board chargers (OBC)

Package Includes

• 1 x NCE65TF099F N-Channel Super Junction MOSFET (TO-220F)