SVS11N60FD2 N-Channel Super Junction Power MOSFET

Description

Marked "11N60FD2" on the package with the SL logo and "D-Well™" branding (matching the same branding seen on the earlier 20N60FJD2 part), this is Hangzhou Silan Microelectronics' SVS11N60FD2, confirmed directly against Silan's own official datasheet packing table. The SVS11N60D/F/S/FJ/T/KD2 series is an N-channel enhancement mode high-voltage power MOSFET manufactured using Silan's super junction MOS technology, offering very low conduction and switching losses, which gives power converters high efficiency, high power density, and improved thermal behavior. It's broadly applicable — for example, suited for both hard and soft switching topologies.

Silan's own datasheet confirms the ordering/marking table: part SVS11N60FD2 is packaged in TO-220F-3L, printed with the marking "11N60FD2" — an exact match to your part.

Key Specifications

• Type: N-Channel Enhancement Mode Super Junction Power MOSFET
• Manufacturer: Silan Microelectronics (rebadged as "D-Well")
• Package Marking: 11N60FD2
• Package: TO-220F-3L, isolated, 3-pin, through-hole
• Drain-Source Voltage (VDS): 600V
• Drain Current (ID): 11A 
• RDS(ON), typical: 0.3Ω @ VGS = 10V 
• Features: Innovative high-voltage technology, low gate charge, rated repetitive avalanche capability, strong dv/dt capability, high current peak 

Common Applications

• Hard-switching and soft-switching power converter topologies 
• Switch-mode power supplies (SMPS)
• Motor drive circuits
• General 600V-class power switching designs

Package Includes

• 1 x Silan SVS11N60FD2 ("D-Well" 11N60FD2) N-Channel MOSFET (TO-220F-3L, isolated)