SVS20N60FJD2 N Channel Super Junction Power MOSFET

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Description Marked "20N60FJD2" on the package with the SL logo and "D-Well™" branding, this matches Hangzhou Silan Microelectronics' SVS20N60FJD2, part of their SVS20N60FJ(K)(T)(PN)(S)(P7)D2 product…

Description

Marked "20N60FJD2" on the package with the SL logo and "D-Well™" branding, this matches Hangzhou Silan Microelectronics' SVS20N60FJD2, part of their SVS20N60FJ(K)(T)(PN)(S)(P7)D2 product family. It's an N-channel enhancement mode high-voltage power MOSFET built on Silan's super junction MOS technology, which achieves low conduction loss and switching losses. The specific "FJD2" suffix corresponds to the isolated TO-220FJ-3L package variant, with the marking code "20N60FJD2" and halogen-free construction confirmed in Silan's own ordering information table.

The "D-Well" branding on the package likely refers to a private-label or distributor rebrand of the underlying Silan die — the electrical characteristics and marking code match Silan's part exactly, so this should be treated functionally as the SVS20N60FJD2.

Key Specifications

Type: N-Channel Enhancement Mode Super Junction Power MOSFET
Manufacturer: Silan Microelectronics (rebadged as "D-Well")
Package Marking: 20N60FJD2
Package: TO-220FJ-3L, isolated, through-hole
Drain-Source Voltage (VDS): 600V
Drain Current (ID): 20A
Gate-Source Voltage (VGS): 30V max
Gate Threshold Voltage (Vgs(th)): 4V max
RDS(ON), max: 0.19Ω
Power Dissipation: 45W
Total Gate Charge (Qg): 39nC
Max Junction Temperature: 150°C
Compliance: Halogen-free

Common Applications

Switch-mode power supplies (SMPS)
Motor drive circuits
Power converters requiring 600V-class blocking voltage
Industrial and consumer switching applications where isolated TO-220 mounting is needed